Lifetime measurement

Life-time measurement system for silicon bulks / ingots with non-contact

HF-90R

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  • Lifetime measurement

Selling Points

  • Silicon bulk, Prismatic shape (JIS code), Ingot condition
  • Non-contact photoconduction vibration decay method
  • Data processing by digital oscilloscope and PC with software

Details

Applications

Silicon ingot, Silicon bulk, Prismatic shape (JIS code)

Sample sizes

*Please contact us in details

Measuring range

100 ~ 5,000μS (in the range of 10 ~ 5,000Ω・cm)

Life-time measurement system for silicon bulks/ingots by JIS method

HF-100DCA

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  • Lifetime measurement

Selling Points

  • Global standard model for the lifetime test of silicon bulk
  • JIS direct current anodizing method
    Data processing by digital oscilloscope and PC with software

Details

Applications

Silicon ingot, Silicon bulk, Prismatic shape (JIS code)

Sample sizes

*Please contact us in details

Measuring range

50 μS~ 20mS

Non-contact Mono-crystalline/Polycrystalline Silicon wafer/blick lifetime measurement

HF-300

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  • Lifetime measurement
  • Lifetime measurement

Selling Points

  • Non-contact, non-damage measurement by μ-PCD
  • Suitable for mono-crystalline and polycrystalline silicon sample
  • Multipoint measurement & mapping image
  • Passivation with exclusive capsule (for wafer, bulk sample)

Details

Applications

Silicon wafer, blick(bulk) [Mono-crystalline, Polycrystalline]

Sample sizes

[Wafer] <Square> ~ 210x210mm, <Circle> ~8 inch

[Blick] Max. 210(W) x 210(H) x 500(D) mm

 

Measuring range

0.1 μS ~ 1000μS (*Compatible to resistivity range ; 0.1 ~ 1,000Ω・cm)

<Laser unit> Type : Semiconductor laser diode,
Wave length : 905nm, Peak power : 60W, Pulse width : 80nS

Related product

Inline lifetime measurement module : HF-300BI