Life-time measurement system for silicon bulks / ingots with non-contact
HF-90R
Image of Product
Selling Points
- Silicon bulk, Prismatic shape (JIS code), Ingot condition
- Non-contact photoconduction vibration decay method
- Data processing by digital oscilloscope and PC with software
Details
Applications
Silicon ingot, Silicon bulk, Prismatic shape (JIS code)
Sample sizes
*Please contact us in details
Measuring range
100 ~ 5,000μS (in the range of 10 ~ 5,000Ω・cm)
Life-time measurement system for silicon bulks/ingots by JIS method
HF-100DCA
Image of Product
Selling Points
- Global standard model for the lifetime test of silicon bulk
- JIS direct current anodizing method
Data processing by digital oscilloscope and PC with software
Details
Applications
Silicon ingot, Silicon bulk, Prismatic shape (JIS code)
Sample sizes
*Please contact us in details
Measuring range
Non-contact Mono-crystalline/Polycrystalline Silicon wafer/blick lifetime measurement
HF-300
Image of Product
Selling Points
- Non-contact, non-damage measurement by μ-PCD
- Suitable for mono-crystalline and polycrystalline silicon sample
- Multipoint measurement & mapping image
- Passivation with exclusive capsule (for wafer, bulk sample)
Details
Applications
Silicon wafer, blick(bulk) [Mono-crystalline, Polycrystalline]
Sample sizes
[Wafer] <Square> ~ 210x210mm, <Circle> ~8 inch
[Blick] Max. 210(W) x 210(H) x 500(D) mm
Measuring range
0.1 μS ~ 1000μS (*Compatible to resistivity range ; 0.1 ~ 1,000Ω・cm)
<Laser unit> Type : Semiconductor laser diode,
Wave length : 905nm, Peak power : 60W, Pulse width : 80nS
Related product
Inline lifetime measurement module : HF-300BI